2002. 5. 9
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1662
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4374.
MAXIMUM RATING (Ta=25)
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : h
FE
Classification O:70140, Y:120240
P
C
* : KTA1662 mounted on ceramic substrate (250mm
2
x0.8t)
F
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-80V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-80
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-50mA
70
-
240
h
FE
(2)
V
CE
=-2V, I
C
=-200mA
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-20mA
-
-
-0.4
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-5mA
-0.55
-
-0.8
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
14
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-400
mA
Base Current
I
B
-80
mA
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
2002. 5. 9
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KTA1662
Revision No : 3
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-2
-100
C
0
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
m
A
)
50
D
C
C
U
R
R
E
N
T
G
A
I
N
h
F
E
500
-1
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
C
E
(
s
a
t
)
-0.01
-1
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-0.5
C
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
m
A
)
-1
I - V
C
BE
BE
BASE-EMITTER VOLTAGE V (V)
0
-0.2
-0.4
-100
C
0
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
m
A
)
-4
-6
-8
-10
-12
-14
-200
-300
-400
-500
COMMON EMITTER
Ta=25 C
I =0.5mA
B
-1mA
-2mA
-3mA
-5mA
0mA
-3
-10
-30
-100
-300
30
100
10
300
COMMON EMITTER
V =-2V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
-3
-10
-30
-100
-500
-0.03
-0.05
-0.1
-0.3
-0.5
V
O
L
T
A
G
E
V
(
V
)
COMMON EMITTER
I /I =10
C B
Ta=
100
C
Ta=-25 C
Ta=25 C
-0.6
-0.8
-1.0
-1.2
-200
-300
-400
-500
COMMON EMITTER
V =-2V
CE
T
a=
10
0
C
T
a=
25
C
T
a=
-2
5
C
-1
-3
-10
-30
-100
-300
-3
-10
-30
-100
-300
-1k
-3k
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX(PULSE)
C
C
I MAX
(CONTINUOUS)
DC O
PER
ATIO
N
1m
s
10m
s
100
ms
C
O
L
L
E
C
T
O
R
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
P
(
W
)
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
40
60
80
100
120
140
160
0
0.4
0.6
0.8
1.0
1.2
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm x0.8t)
2 Ta=25 C
2
1
2
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